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2016 Top Sell High Voltage Rectifier Diode SMD Diode

    Payment Type: T/T
    Min. Order: 1000
    Productivity: 500000 Piece/Pieces Per Month
    Place of Origin:  Guangdong, China (Mainland)
    Supply Ability: 500000 Piece/Pieces Per Month
    Certificate: RoHS/ISO9000
  • Mr. Catherine Zhou

Basic Info

Model No.:  Diode IN4007

Product Description

Model NO.: Diode IN4007 Application: General Purpose Color: Black Max. Forward Voltage: 1.0V Max. Forward Current: 1A Operating Temperature: -65ºC to +175ºC Shipping by: FedEx DHL TNT UPS Cooling Method: Naturally Cooled Tube Function and Usage: Microwave Transistor Current Capacity: High Power Transistor Craft: Planar Transistor Specification: 4.5*15mm Encapsulation Structure: Ceramic Packaged Transistor Certification: RoHS/ISO9000 Material: Germanium Transistors Max. Reverse Voltage: 50-1000V Max. Reverse Current: 5.0ua Tolerance: ±5% Type: Diode Shape: ST Operating Frequency: High Frequency Transistor Shielding Way: Remote Cut-off Shielding Tube Trademark: Xuhai Origin: Guangdong, China (Mainland) 2016 Top Sell High Voltage Rectifier Diode SMD Diode  2016 Top Sell High Voltage Rectifier Diode SMD DiodeFeatures: 1.For surface mounted application
2.Easy pick and place
3.Metal to silicon rectifier, majority carrier conduction
4.Low power loss, high efficiency
5.High current capability, low VF
6.High surge current capability
7.Plastic material used carriers Underwriters Laboratory Classification 94V-0
8.Epitaxial construction
9.High temperature soldering: 260oC / 10 seconds at terminals
10.Operating Temperature: -55°C to +125°C
11.Storage temperature: -55°C to +150°C
12.Maximum Thermal Resistance: 28°C/W Junction To Lead
Maximum  Ratings&Thermal  Characteristics Ratings at 25ºC ambient temperature unless otherwise specified.

Symbol

Parameter

Value

Unites

I F(AV)

Maximum Average Forward Rectified Current

1.0

A

I FSM

Peak   Forward   Surge   Current
(8.3 ms single half-sine-wave superimposed on rated load)

30

A

V RRM

Maximum Peak Repetitive Reverse Voltage 

1000

V

V RMS

Maximum   RMS Voltage 

700

V

V DC

Maximum  DC  blocking  Voltage 

1000

V

RθJA

Typical Thermal resistance (NOTE 1)

50

ºC/W

T A

Maximum DC blocking Voltage  Temperature 

+150

ºC

T J,TSTG

Operating Junction and Storage Temperature Range 

-65 to +150

ºC


Electrical Characteristics Ratings at 25ºC ambient temperature unless otherwise specified.

Symbol

Parameter

Value

Units

V F

Maximum  Instantaneous  Forward  Voltage

1.1

V

I R

Maximum  DC  Reverse  Current  

 

μA

 

TA=25ºC At Rated DC blocking Voltage TA=100

5.0

 

 

ºC

50

 

C J

Typical Junction capacitance  at 4.0V, 1MHz

15

pF

PS: 1.This company specialized production various specifications and types of diodes        2. Please consult your understanding with the company for details

2016 Top Sell High Voltage Rectifier Diode SMD Diode

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