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High Quality and High Power Transistor/Triode

    Payment Type: T/T
    Min. Order: 1000
    Productivity: 500000 Piece/Pieces Per Month
    Place of Origin:  Guangdong, China (Mainland)
    Supply Ability: 500000 Piece/Pieces Per Month
    Certificate: RoHS
  • Mr. Catherine Zhou

Basic Info

Model No.:  triode

Product Description

Model NO.: Triode Encapsulation Structure: Ceramic Packaged Transistor Working Frequency: High Frequency Function: Power Triode Material: Silicon Working Temperature: -55ºC~150ºC Quality: High Quanlity Application: General Purpose Classification of H Fe(1): 160-300 Collector Current -Continuous: 1.5A Transport Package: Box Packaging(50cm*32cm*32cm) Origin: Guangdong, China (Mainland) Certification: RoHS Installation: SMD Triode Power Level: High Power Structure: Alloy DC Current Gain: 200-350 Collector-Base Breakdown Voltage: 40V Shipping by: FedEx DHL TNT UPS Power: Midlle Power Tube Emitter-Base Voltage: 5V Trademark: Xuhai Specification: Customized Size MAXIMUM RATINGS (TA=25ºC unless otherwise noted)

Symbol

Parameter 

Value 

Units 

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

1.5

A

PC

Collector Power Dissipation

0.625

W

Tj

Junction Temperature

150

ºC

Tstg

Storage Temperature

-55-150

ºC


ELECTRICAL CHARACTERISTICS (Tamb=25ºCunless otherwise specified)

Parameter

Symbol

Test conditions

MIN (     )

TYP (     )

MAX (     )

UNIT (    )

Collector-base breakdown voltage

V(BR)CBO

IC= 100μA, IE=0

40

    

 

V

Collector-emitter breakdown voltage 

V(BR)CEO

IC= 1mA, IB=0

25

 

 

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA, IC=0

5

 

 

V

Collector cut-off current

ICBO

VCB=20 V , IE=0

 

 

1

μA

Collector cut-off current

ICEO

VCE=15V , IB=0

 

 

10

μA

Emitter cut-off current

IEBO

VEB=5V , IC=0

 

 

1

μA

DC current gain

hFE

VCE=1V, IC= 100mA

     80

 

400

 

Collector-emitter saturation voltage

VCE(sat)

IC=800mA, IB= 80mA

 

 

0.5

V

Base-emitter saturation voltage 

VBE(sat)

IC=800mA, IB= 80mA

 

 

1.2

V



High Quality and High Power Transistor/Triode
High Quality and High Power Transistor/Triode

High Quality and High Power Transistor/Triode
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